Transistor BC846B (1B) bipolar 0.1A 60V NPN SOT23 – designed for use in general-purpose pulse and switching devices.
Characteristics
- Marking 1B 1Bp 1Bs 1Bt 1BW 8AB QAB
- Material type Si
- NPN structure
- Maximum collector-base voltage 80 V
- Maximum collector-emitter voltage 60 V
- Maximum emitter-base voltage 6 V
- Maximum continuous collector current 0.1 A
- Maximum PN transition temperature 150 °C
- Power dissipation 0.15 W
- Collector junction capacitance 6 pF
- Current transfer coefficient 200
- Current transfer coefficient cutoff frequency 300 MHz
- Mounting method SMD mounting
- SOT23 case
